Effects of Positive and Negative Stresses on III-V MOSFETs With Al2O3 Gate Dielectric

N. Wrachien, University of Padua
A. Cester, University of Padua
Y. Q. Wu, Birck Nanotechnology Center, Purdue University
Peide D. Ye, Birck Nanotechnology Center, Purdue University
E. Zanoni, University of Padua
G. Meneghesso, University of Padua

Abstract

We subjected III-V InGaAs MOSFETs to positive and negative gate stresses. The stress polarity strongly affects the degradation kinetics of the gate current. Positive stress features a remarkable increase of the gate current, a net negative trapped charge, a large telegraphic noise, and soft breakdown, before the occurrence of the final catastrophic breakdown. Negative stress features only positive trapped charge until the hard breakdown.

Discipline(s)

Nanoscience and Nanotechnology