Integrated electronic transport and thermometry at milliKelvin temperatures and in strong magnetic fields

N. Samkharadze, Birck Nanotechnology Center, Purdue University
A. Kumar, Purdue University
Michael J. Manfra, Birck Nanotechnology Center, Purdue University
L. N. Pfeiffer, Princeton University
K. W. West, Princeton University
Gabor Csathy, Purdue University

Date of this Version



Rev. Sci. Instrum. 82, 053902 (2011)


Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Rev. Sci. Instrum. 82, 053902 (2011) and may be found at The following article has been submitted to/accepted by Review of Scientific Instruments. Copyright (2011) N. Samkharadze, A. Kumar, M. J. Manfra, L. N. Pfeiffer, K. W. West and G. A. Csáthy. This article is distributed under a Creative Commons Attribution 3.0 Unported License.


We fabricated a He-3 immersion cell for transport measurements of semiconductor nanostructures at ultra low temperatures and in strong magnetic fields. We have a new scheme of field-independent thermometry based on quartz tuning fork Helium-3 viscometry which monitors the local temperature of the sample's environment in real time. The operation and measurement circuitry of the quartz viscometer is described in detail. We provide evidence that the temperature of two-dimensional electron gas confined to a GaAs quantum well follows the temperature of the quartz viscometer down to 4 mK. (C) 2011 American Institute of Physics. [doi:10.1063/1.3586766]


Nanoscience and Nanotechnology