The work describes the first demonstration of fully transparent thin-film-transistors (TFTs) based on well-aligned single-walled carbon nanotube (SWNT) arrays with indium tin oxide (ITO) source/drain/gate electrodes. The fully transparent SWNT-TFTs could be attractive candidates for future flexible/ or transparent electronics. The transistors provide suitable current levels to drive OLED pixels (e.g. for high resolution displays), and operated at relatively low gate biases (~2V). The use of aligned SWNTs allows scaling of the current levels with device width, which will be important for future circuit approaches. We propose several new approaches to overcome the limitations of conventional carbon nanotube transistors. 1. Difficulty in the separation of semiconducting and metallic SWNTs ~ Electrical burning at two terminals 2. Alignment of the nanotubes to device in a controlled fashion ~ Aligned SWNTs array on quartz substrate 3. High yield devices isolated from their environment ~ Atomic layer deposition (ALD) passivation

Date of this Version

April 2008