As the Moore's Law push device scaling to a fundamental physical limit, alternatives have been attempted to explore tha "Plenty of Room at the Bottom." Chip giant Intel and IBM announced the high-k dielectric with metal gate technology on their 45-nm node generation using ALD— "The implementation of high-k and metal materials marks the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s" — by Gordon Moore

This somehow gives people the motivation to pursue the similar concept: ALD high-k dielectric on III-V compound semiconductor MOSFETs, which have higher mobility than Silicon, probably a suitable candidate of further generations.


atomic layer deposition

Date of this Version

April 2007