Abstract
A realistic 40 nm InAs high electron mobility transistor is studied using a two-dimensional, full-band, and atomistic Schr¨odinger-Poisson solver based on the sp3d5s∗ tightbinding model. Bandstructure non-parabolicity effects, strain, alloy disorder in the InGaAs and InAlAs barriers, as well as band-to-band tunneling in the transistor OFF-state are automatically included through the full-band atomistic model. The source and drain contact extensions are taken into account a posteriori by adding two series resistances to the device channel. The simulated current characteristics are compared to measured data and show a good quantitative agreement.
Keywords
Realistic 40 nm InAs HEMT, Atomistic Simulation
Date of this Version
12-15-2008
Comments
IEEE IEDM, San Francisco, USA, Dec. 15-17, 2008