Proceedings of ICPS 2008 (International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, July 27-Aug. 1, 2008 (Oral presentation)


We study the electrical transport through single As donors incorporated in the channel of a FinFET, i.e. a donor in a three-terminal geometry. By means of spectroscopic measurements in conjuction with a NEMO-3D model, we can identify the excited states and associate them with either the donors Coulomb potential, a triangular well at the interface or a hybridized combination of the two. The correspondence between the transport measurements, the theoretical model and the local environment provides an atomic understanding of actual gated donors in a nanostructure.


Single donors, FinFET, Transport spectroscopy

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