2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008, September 9-11, 2008, Yumoto Fujiya Hotel, Hakone, Japan.


Double-gate metal-oxide-semiconductor field-effect transistors (DG MOSFETs) are promising candidates to replace the conventional planar bulk MOSFETs starting at the 22 nm technology node in 2012. Since the fabrication of novel devices is always a difficult and expensive process physics-based simulation tools can support their development. For example the surface orientation and the transport direction of DG MOSFETs profoundly affect their current characteristics. This issue is addressed in this paper for the three most important configurations experimented in the industry, (a) surface orientation along the (100) crystal axis and transport along the 100 axis, (b) surface along the (110) axis with 110 oriented channel, and finally (c) surface along the (111) axis and transport in the 112 direction. Realistic n- and p-doped Si MOSFETS are treated using an atomistic and full band simulator.

Date of this Version

September 2008