The technology computer aided design of nanometer-scaled semiconductor devices requires appropriate quantum-mechanical models that capture the atomic granularity of the simulation domain. The recently developed nanodevice simulator OMEN fullls this condition. It is able to treat two- and three-dimensional transistor structures in a full-band framework using the semi-empirical sp3d5s tight-binding model. In this formalism each atom of the device is represented by a set of ten orbitals leading to multi-band and open-boundary Schroedinger equations that have to be solved thousands of times. To improve its computational efciency OMEN has four levels of parallelism that make it run on the largest available supercomputers.
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