The Birck Nanotechnology Center (BNC) leverages advances in nanoscale science and engineering to create innovative nanotechnologies addressing societal challenges and opportunities in computing, communications, the environment, security, energy independence, and health.
This series contains nanotechnology publications published through the Birck Nanotechnology Center at Purdue University.
Publications from 2017
Thermal Transport at the Nanoscale: A Fourier's Law vs. Phonon Boltzmann Equation Study, Jan Kaiser, T. Feng, Jesse Maassen, X. Wang, X. Ruan, and Mark S. Lundstrom
Publications from 2013
Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors, Hoon Ryu, Dukyun Nam, Bu-Young Ahn, JongSuk Ruth Lee, Kumwon Cho, Sunhee Lee, Gerhard Klimeck, and Mincheol Sin
Publications from 2011
Subband Engineering for p-type Silicon Ultra-Thin Layers for Increased Carrier Velocities: An Atomistic Analysis, Neophytos Neophytou, Gerhard Klimeck, and Hans Kosina
Publications from 2010
Universality of non-Ohmic shunt leakage in thin-film solar cells, Sourabh Dongaonkar, J. D. Servaites, G. M. Ford, S. Loser, R. M. Gelfand, H. Mohseni, Hugh Hillhouse, R. Agrawal, M. A. Ratner, T. J. Marks, Mark S. Lundstrom, and Muhammad A. Alam
nanoHUB.org Serving Over 120,000 Users Worldwide: It's First Cyber-Environment Assessment, Krishna PL.C. Madhavan, Diane Beaudoin, Swaroop Shivarajapura, George B. Adams III, and Gerhard Klimeck
Publications from 2009
A domain adaptive stochastic collocation approach for analysis of MEMS under uncertainties, Nitin Agarwal and N R. Aluru
Imaging Gold Nanorods by Plasmon-Resonance-Enhanced Four Wave Mixing, Yookyung Jung, Hongtao Chen, Ling Tong, and Ji-Xin Cheng
Performance comparison between p-i-n tunneling transistors and conventional MOSFETs, Siyuranga O. Koswatta, Mark S. Lundstrom, and Dmitri E. Nikonov
Interfacial energy between carbon nanotubes and polymers measured from nanoscale peel tests in the atomic force microscope, Mark C. Strus, Camilo I. Cano, R. Byron Pipes, Cattien V. Nguyen, and Arvind Raman
Strain energy and lateral friction force distributions of carbon nanotubes manipulated into shapes by atomic force microscopy, Mark C. Strus, Roya R. Lahiji, Pablo Ares, Vincente Lopez, Arvind Raman, and Ron R. Reifenberger
Gold nanorod-mediated photothermolysis induces apoptosis of macrophages via damage of mitochondria, Ling Tong and Ji-Xin Cheng
Gold Nanorods as Contrast Agents for Biological Imaging: Optical Properties, Surface Conjugation and Photothermal Effects, Ling Tong, Qingshan Wei, Alexander Wei, and Ji-Xin Cheng
Publications from 2008
1D hetero-structure tool for atomistic simulation of nano-devices, Samarth Agarwal, Kaushik Balamukundhan, Neophytos Neophytou, and Gerhard Klimeck
Carbon nanotubes for high-performance electronics - Progress and prospect, Joerg Appenzeller
Toward Nanowire Electronics, Joerg Appenzeller, Joachim Knoch, Mikael Bjoerk, Heike Riel, Heinz Schmid, and Walter Riess
A Nano-electronics Simulator for Petascale Computing: From NEMO to OMEN, Hansang Bae, Steve Clark, Ben Haley, Ryu Hoon, Gerhard Klimeck, Sunhee Lee, Mathieu Luisier, and Faisal Saied
Evolution time and energy uncertainty, Timothy B. Boykin, Neerav Kharche, and Gerhard Klimeck
Multiband transmission calculations for nanowires using an optimized renormalization method, Timothy B. Boykin, Mathieu Luisier, and Gerhard Klimeck
Release of hydrophobic molecules from polymer micelles into cell membranes revealed by Forster resonance energy transfer imaging, Hongtao Chen, Sungwon Kim, Shuyi Wang, Kinam Park, and Ji-Xin Cheng
Externally assembled gate-all-around carbon nanotube field-effect transistor, Zhihong Chen, Damon Farmer, Sheng Xu, Roy Gordon, Phaedon Avouris, and Joerg Appenzeller
A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors with Doped Reservoirs and Realistic Geometry, Gianluca Fiori, Giuseppe Iannaccone, and Gerhard Klimeck
Field-Effect Transistors with Doped Reservoirs and Realistic Geometry, Gianluca Fiori, Giuseppe Iannaccone, and Gerhard Klimeck
Atomistic non-equilibrium Green's function simulations of Graphene nano-ribbons in the quantum hall regime, Roksana Golizadeh-Mojarad, Abu Naser M. Zainuddin, Gerhard Klimeck, and Supriyo Datta
Atomistic NEGF Simulations of Carbon Nano-Ribbons in Magnetic Fields, Roksana Golizadeh-Mojarad, A.N.M. Zainuddin, Shaikh S. Ahmed, Gerhard Klimeck, and Supriyo Datta
Modeling and simulation of field-effect biosensors (BioFETs) and their deployment on the nanoHUB, Clemens Heitzinger, Rick Kennell, Gerhard Klimeck, Norbert Mauser, Michael McLennan, and Christian Ringhofer
Optimization of Gate Leakage and NBTI for Plasma-Nitrided Gate Oxides by Numerical and Analytical Models, Ahmad Ehteshamul Islam, Souvik Mahapatra, and Muhammad A. Alam
Electronic structure and transmission characteristics of SiGe nanowires, Neerav Kharche, Mathieu Luisier, Timothy B. Boykin, and Gerhard Klimeck
Valley splitting in strained silicon quantum wells modeled with 2 deg miscuts, step disordere, and alloy disorder, Neerav Kharche, Marta Prada, Timothy B. Boykin, and Gerhard Klimeck
From NEMO1D and NEMO3D to OMEN: Moving Towards Atomistic 3-D Quantum Transport in Nano-scale Semiconductors, Gerhard Klimeck and Mathieu Luisier
nanoHUB.org: Advancing Education and Research in Nanotechnology, Gerhard Klimeck, Michael McLennan, Sean B. Brophy, George B. Adams III, and Mark S. Lundstrom
nanoHUB.org - online simulation and more materials for semiconductors and nanoelectronics in education and research, Gerhard Klimeck, Michael McLennan, Mark S. Lundstrom, and George B. Adams III
Tunneling phenomena in carbon nanotube field-effect transistors, Joachim Knoch and Joerg Appenzeller
Outperforming the conventional scaling rules in the quantum-capacitance limit, Joachim Knoch, W Riess, and Joerg Appenzeller
Influence of Phonon Scattering on the Performance of p-i-n Band-to-Band-Tunneling Transistors, Siyuranga O. Koswatta
Nonequilibrium Green's function treatment of phonon scattering in carbon nanotube transistors, Siyuranga O. Koswatta
Influence of Phonon Scattering on the Performance of p-i-n Band-to-Band Tunneling Transistors, Siyuranga O. Koswatta, Mark S. Lundstrom, and Dmitri E. Nikonov
Level Spectrum of Single Gated As Donors, Gabriel P. Lansbergen, Rajib Rahman, J. Caro, N. Collaert, S. Biesemans, Gerhard Klimeck, S. Rogge, and L.C. L. Hollenberg
Transport-based Dopant Metrology in Advanced FinFETs, Gabriel P. Lansbergen, Rajib Rahman, Cameron J. Wellard, Jaap Caro, Nadine Collaert, Serge Biesemans, Gerhard Klimeck, Lloyd C. L. Hollenberg, and Sven Rogge
Determination of the Eigenstates and Wavefunctions of a Single Gated As Donor, Gabriel P. Lansbergen, R. Rahman, C. J. Wellard, P. E. Rutten, J. Caro, I. Woo, N. Colleart, S. Biersemans, and Gerhard Klimeck
Level Spectrum of Single Gated As Donors, G. P. Lansbergen, R. Rahman, J. Caro, N. Collaert, S. Biesemans, L. C. L. Hollenberg, S. Rogge, and Gerhard Klimeck
Band-Structure Effects on the Performance of III-V Ultrathin-Body SOI MOSFETs, Yang Liu, Neophytos Neophytou, Gerhard Klimeck, and Mark S. Lundstrom
A Tight-Binding Study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs, Yang Liu, Neophytos Neophytou, Tony Low, Gerhard Klimeck, and Mark Lundstrom
A parallel sparse linear solver for nearest-neighbor tight-binding problems, Mathieu Luisier, Wolfgang Fichtner, Andreas Schenk, Timothy B. Boykin, and Gerhard Klimeck
A Multi-level parallel simulation approach to electron transport in nano-scale transistors, Mathieu Luisier Purdue University - Main Campus and Gerhard Klimeck
Full-band and atomistic simulation of n- and p-doped double-gate MOSFETs for the 22nm technology node, Mathieu Luisier Purdue University - Main Campus and Gerhard Klimeck
OMEN an atomistic and full-band quantum transport simulator for post-CMOS nanodevices, Mathieu Luisier and Gerhard Klimeck
Full-Band and Atomisic Simulation of Realistic 40 nm InAs HEMT, Mathieu Luisier, Neophytos Neophytou, Neerav Kharche, and Gerhard Klimeck
NEMO-3D based atomistic simulation of a double quantum dot structure for spin-blockaded transport, Bhaskaran Muralidharan, Hoon Ryu, Zhen Huang, and Gerhard Klimeck
Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D, Maxim Naumov, Sunhee Lee, Ben Haley, H. Bae, Steve Clark, Rajib Rahman, Hoon Ryu, Faisal Saied, and Gerhard Klimeck
Simulations of nanowire transistors: atomistic vs. effective mass models, Neophytos Neophytou, Abhijeet Paul, Mark S. Lundstrom, and Gerhard Klimeck
Electronic structure and transport in silicon nano-structures with non-ideal bonding environments, Amritanshu Palaria, Gerhard Klimeck, and Alejandro Strachan
Orientation dependence of the charge distribution and quantum capacitance in silicon nanowire transistors, Abhijeet Paul Purdue University - Main Campus, Neophytos Neophytou, and Gerhard Klimeck
High Precision Quantum Control of Single Donor Spins in Silicon, Rajib Rahman, Cameron J. Wellard, Forrest R. Bradbury, Marta Prada, Jared H. Cole, Gerhard Klimeck, and Lloyd C. L. Hollenberg
Contact Block Reduction Method for Ballistic Quantum Transport with Semi-empirical sp3d5s* Tight Binding band models, Hoon Ryu and Gerhard Klimeck
Phonon runaway in carbon nanotube quantum dots, L Siddiqui, A W. Ghosh, and Supriyo Datta
Atomistic tight binding study of strain-reduced confinement potentials in identical and non-identical InAs/GaAs vertically stacked quantum dots, Muhammad Usman, Shaikh Ahmed, and Gerhard Klimeck
Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3µm-1.5µm) optical applications, Muhammad Usman, Dragica Vasileska, and Gerhard Klimeck
Publications from 2007
Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org, Shaikh Ahmed, Gerhard Klimeck, Derrick Kearney, Michael McLennan, and M. P. Anantram
Bacteria-mediated delivery of nanoparticles and cargo into cells, Demir Akin, Kathy Ragheb, Jennifer Sturgis, Debby Sherman, Kristen Burkholder, J. Paul Robinson, Arun K. Bhunia, Sulma Mohammed, and Rashid Bashir
1/f noise in carbon nanotube devices - On the impact of contacts and device geometry, Joerg Appenzeller, Yu-Ming Lin, Joachim Knoch, Zhihong Chen, and Phaedon Avouris
Large Scale Simulations of Nanoelectronic devices with NEMO3-D on the Teragrid, Hansang Bae, Steve Clark, Gerhard Klimeck, Sunhee Lee, Maxim Naumov, and Faisal Saied
Controlling interfacial curvature in nanoporous silica films formed by evaporation-induced self-assembly from nonionic surfactants. I. Evolution of nanoscale structures in coating solutions, Luis Bollmann, Vikrant Urade, and Hugh Hillhouse
Brillouin-zone unfolding of perfect supercells having nonequivalent primitie cells illustrated with a Si/Ge tight-binding parameterization, Timothy B. Boykin, Neerav Kharche, and Gerhard Klimeck
Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations, Timothy B. Boykin, Neerav Kharche, Gerhard Klimeck, and Marek Korkusinski
The Electronic Structure and Transmission Characteristics of Disordered AlGaAs Nanowires, Timothy B. Boykin, Mathieu Luisier, Andreas Schenk, Neerav Kharche, and Gerhard Klimeck
The electronic structure and transmission characteristics of disordered AlGaAs nanowires, Timothy B. Boykin, Mathieu Luisier, Andreas Schenk, Neerav Kharche, and Gerhard Klimeck
Coupled mode space approach for the simulation of realistic carbon nanotube field-effect transistors, Gianluca Fiori, Giuseppe Iannaccone, and Gerhard Klimeck
Chemical kinetic considerations for postflame synthesis of carbon nanotubes in premixed flames using a support catalyst, Prarthana Gopinath and Jay P. Gore
Computational aspects of the three-dimensional feature-scale simulation of silicon-nanowire field-effect sensors for DNA detection, Clemens Heitzinger and Gerhard Klimeck
In vivo quantitation of rare circulating tumor cells by multiphoton intravital flow cytometry, Wei He, Haifeng Wang, Lynn C. Hartmann, Ji-Xin Cheng, and Phillip S. Low
NEMO-3D based Atomistic Simulation of a Double Quantum Dot Structure for Spin-Blockaded Transport, Z. Huang, B. Muralidharan, H. Ryu, Gerhard Klimeck, and S. Datta
Hyperthermic effects of gold nanorods on tumor cells, Terry B. Huff, Ling Tong, Matthew N. Hansen, Ji-Xin Cheng, and Alexander Wei
Understanding Coulomb effects in nanoscale Schottky-barrier-FETs, Klaus M. Indlekofer, Joachim Knoch, and Joerg Appenzeller
Critical analysis of short-term negative bias temperature instability measurements: Explaining the effect of time-zero delay for on-the-fly measurements, Ahmad Ehteshamul Islam, Haldun Kufluoglu, Dhanoop Varghese, and Muhammad A. Alam
Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation, Ahmad Ehteshamul Islam, Haldun Kufluoglu, Dhanoop Varghese, Souvik Mahapatra, and Muhammad A. Alam
Gaseous slip flow analysis of a micromachined flow sensor for ultra small flow applications, Jaesung Jang and Steven Wereley
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics, Sanghyun Ju, Antonio Facchetti, Xi XUAN, Jun Liu, Fumaiki Ishikawa, P. D. Ye, Chongwu Zhou, Tobin J. Marks, and David B. Janes
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics, Sanghyun Ju, Antonio Facchetti, Yi Xuan, Jun Liu, Fumaiki Ishikawa, P. D. Ye, Chongwu Zhou, Tobin J. Marks, and David B. Janes
High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment, Sanghyun Ju, Kangho Lee, Myung-Han Yoon, Antonio Facchetti, Tobin J. Marks, and David B. Janes
N-type field-effect transistors using multiple Mg-doped ZnO nanorods, Sanghyun Ju, Jianye Li, Ninad Pimparkar, Muhammad A. Alam, R. P. H. Chang, and David B. Janes
Negative resist behavior of neutral sodium atoms deposited on self-assembled monolayers, Sanghyun Ju, A.K. Mills, Qingling Hang, Daniel S. Elliott, and David B. Janes
High Performance Electronics Based on Dense, Perfectly Aligned Arrays of Single Walled Carbon Nanotubes, Seong Jun Kang, Coskun Kocabas, Taner Ozel, Moonsub Shim, Ninad Pimparkar, Muhammad A. Alam, Slava Rotkin, and John A. Rogers
Heterogeneous wafer-scale circuit architectures, Linda Katehi, William J. Chappell, Saeed Mohammadi, Alexandros Margomenos, and Michael Steer
A wideband PVDF-on-silicon ultrasonic transducer array with microspheres embedded low melting temperature alloy backing, Hyun-Joong Kim, Hanwoo Lee, and Babak Ziaie
Atomistic simulation of realistically sized nanodevices using NEMO 3-D - Part I: Models and benchmarks, Gerhard Klimeck, Shaikh S. Ahmed, Hansang Bae, Neerav Kharche, Rajib Rahman, Steve Clark, Benjamin Haley, Sunhee Lee, Maxim Naumov, Hoon Ryu, Faisal Saied, Marta Prada, Marek Korkusinski, and Timothy Boykin
Atomistic simulation of realistically sized nanodevices using NEMO 3-D - Part II: Applications, Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, Marta Prada, and Timothy Boykin
Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors, Joachim Knoch, M Zhang, Joerg Appenzeller, and S Mantl
Computational Model for Transport in Nanotube-Based Composites with Applications to Flexible Electronics, Satish Kumar, Muhammad A. Alam, and Jayathi Y. Murthy
Integration of hydrogels with hard and soft microstructures, Ming Li, Babak Ziaie, Eric Nuxoll, Kristóf Iván, and Ronald A. Siegel
Electrical transport and 1/f noise in semiconducting carbon nanotubes, Yu-Ming Lin, Joerg Appenzeller, Zhihong Chen, and Phaedon Avouris
Transport calculation of semiconductor nanowires coupled to quantum well reservoirs, Mathieu Luisier, Andreas Schenk, Wolfgang Fichtner, and Gerhard Klimeck
Electrical readouts of single and few molecule systems in metal-molecule-metal device structures, Ajit K. Mahapatro and David B. Janes
Sequence specific electronic conduction through polyion-stabilized double-stranded DNA in nanoscale break junctions, Ajit K. Mahapatro, Kyung J. Jeong, Gil U. Lee, and David B. Janes
Energy dispersion relations for holes inn silicon quantum wells and quantum wires, Vladimir Mitin, Nizami Vagidov, Mathieu Luisier, and Gerhard Klimeck
Generic model for current collapse in spin-blockaded transport, Bhaskaran Muralidharan and Supriyo Datta
Theory of high bias coulomb blockade in ultrashort molecules, Bhaskaran Muralidharan, Avik W. Ghosh, Swapan K. Pati, and Supriyo Datta
Eigenvalue Solvers for Atomistic Simulations of Electronic Structures with NEMO-3D, Maxim Naumov, Sunhee Lee, Ben Haley, Rajib Rahman, Hoo Ryu, Faisal Saied, Steve Clark, and Gerhard Klimeck
Influence of vacancies on metallic nanotube transport properties, Neophytos Neophytou, Shaikh Ahmed, and Gerhard Klimeck
Non-equilibrium Green's function (NEGF) simulation of metallic carbon nanotubes including vacancy defects, Neophytos Neophytou, Shaikh Ahmed, and Gerhard Klimeck
Simulations of nanowire transistors: Atomistic vs. Effective Mass Models, Neophytos L. Neophytou, Abhijeet Paul, Mark S. Lundstrom, and Gerhard Klimeck