Recent advances in semiconductor growth technology have enabled the growth of SiGe strained layers on silicon substrates. Si/SiGe technology has a promising future, especially in microwave HBT applications. This work describes the development of an existing two-dimensional drift-diffusion device simulation program for accurate modelling of SiGe heterojunction bipolar transistors (HBT's). PUPHS2D (Purdue University Program for Heterostructure Simulation in Two Dimensions) was formulated by Paul Dodd [Dod89] as an AlGaAs/GaAs HBT simulation tool. This work describes the extension of this program to the silicon and Si 1|_xGex material systems. The computer model allows the user to explore internal device physics as well as terminal characteristics of a device. Field-dependent mobility has been added to the program in order to more accurately compute high-field transport phenomena. The simulation tool is used to study the performance of silicon bipolar transistors and Si/SiGe HBT's, and these results are presented in chapter 4.
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