This work describes the formulation and, development of a two-- dimensional drift-diffusion simulation program for accurate modeling of heterojunction bipolar transistors (HBT's). The model described is a versatile tool for studying HBT's, allowing the user to determine the terminal characteristics and physical operation of devices. Nonplanar structures can be treated, response to transient conditions can be computed, and the high frequency characteristics of transistors may be projected. The formulation of an electron energy balance equation is presented and included in the model in an attempt to more accurately compute high-field transport characteristics. The model is applied to some common design questions and experimental results are reproduced.
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