The Purdue University Program for Heterostructure Simulation in Two Dimensions (PUPHS2D) solves Poisson's equation and the electron and hole continuity equations within a two-dimensional heterostructure device. The program will compute the electrostatic potential, electron and hole densities, recombination rate, and other quantities of interest as a function of applied bias. Like its predecessor, version 2.0 allows extensive analysis of solar cells, including computation of the current-voltage characteristics of two-terminal devices, solar cell parameters, quantum efficiency, and current versus solar intensity. Extensions to version 2.Q include transient analysis and bipolar transistor capability. The heterojunction bipolar transistor routines allow computation of dc currents as a function of applied bias, as well as quasi-static evaluation of the high-frequency behavior. A simplified energy balance equation has been added in the interest of more accurately computing high-field characteristics, and should be viewed as a preliminary step toward this goal. PUPHS2D stands as an accurate model for computing low-field device characteristics and recombinative losses. While PUPHS2D was written for the ternary AlxGai1-xAs, all material specific parameters are contained within a single subroutine (BANDX), except for absorption coefficient and carrier mobilities which are computed in subroutines ALGABS and SETMOB, respectively. Material-specific parameters used for the energy balance equation are found in subroutines INITMU and INITAU. The program may be readily modified to analyze other semiconductors. For a more thorough discussion of the theoretical basis and numerical implementation of PUPHS2D, the user is directed to the references. Materials parameters are described in reference [I]. Various phases of the development of PUPHS2D have been supported by the Semiconductor Research Corporation, Sandia National Laboratories/ the Eastman Kodak Company, and by Research Triangle Institute.
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