Given the potential for quantum effect device application, the growth, by molecular beam epitaxy, and characterization of InSb-CdTe heterostructures is described. Two procedures for growth of these heterostructures are employed. For the growth of InSb/CdTe double heterostructures, InSb and CdTe layers are grown in separate MBE growth chambers connected via an ultrahigh vacuum transfer module. Here, antimony originating from a compound InSb source oven is used for growth of InSb layers. For the growth of CdTe/InSb multiple quantum well structures, InSb and CdTe layers are grown in a single MBE growth chamber, where antimony is derived from an antimony cracking furnace. To study the optical nature of heteroepitaxially grown InSb, infrared photoluminescence from InSb based double heterostructures has been examined. Despite the transferral of grown layers between III-V and II-VI chambers, luminescence gathered from "thick” InSb active layers has shown the existence of recombination features which are similar to bulk InSb. For multilayer structures, grown in a single chamber with the use of an antimony cracker, emphasis has been placed on structural examination by transmission electron microscopy and x-ray diffraction techniques. Examination of multilayer structures by transmission electron microscopy suggests tha t the cracker may be useful for the growth of InSb at low substrate temperatures and low growth rates. Using the cracker, CdTe/InSb superlattice structures have been grown showing multiple satellite peaks in the x-ray diffraction spectrum.
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