The design and development of a transient absorber, abbreviated transorb, is presented. The device is required to protect components from voltage transients up tc 150 A at 60 V. The design is implemented using back-to-back p-i-n diodes. A three mask;-step fabrication sequence is used. Device characterization and simulation shout that a device of area 0.04cm2 meets the required specifications. We are successfuly ablle to operate devices of area less than 10-4cm2 at the required current densities. Devices of larger areas are subject to material limitations with current gallium arsenide technology.
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