Abstract
The variation of minority electron mobility with doping density in p+-GaAs has been measured with the zero-field time-of-flight technique. The results from a series of nine GaAs films doped between 1 X lOI and 8 X 10” cmm3 show the mobility decreasing from 1950 cm2 V-’ s-l at 1 X 10” cmm3 to 1370 cm2 V-l s-l at 9X 10” cmB3. For the doping range 9 x 1018-8x 1019 cme3, the decreasing trend in mobility is reversed. The measured mobility of 3710 cm2 V-’ s-l at 8 X 10” cmp3 is about three times higher than the measured value at 9 X 1018 cmm3. These results confirm and extend recent transistor-based measurements and are in accord with recent theoretical predictions that attribute the increase in minority electron mobility in p+-GaAs to reductions in plasmon and carrier-carrier scattering at high hole densities.
Date of this Version
1993
Published in:
Appl. Phys. Lett. 63 (4), 26 July 1993
Comments
Copyright (1993) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett., Vol. 63, No. 4, 26 July 1993 and may be found at http://dx.doi.org/10.1063/1.109997. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1993) E. S. Harmon, M. L. Lovejoy, M. R. Melloch, and M. S. LundstromT. J. de Lyon and J. M. Woodall. This article is distributed under a Creative Commons Attribution 3.0 Unported License.