The scattering matrix approach is a new technique for solving the Boltzmann equation in devices. We report a self-consistent application of the technique to realistic silicon devices exhibiting strong nonlocal effects. Simulation of a hot-electron, n-i-n diode demonstrates that the new technique efficiently and accurately reproduces Monte Carlo results without the statistical noise, allowing much tighter convergence with Poisson’s equation.


Copyright (1992) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 60 (23), 8 June 1992 and may be found at http://dx.doi.org/10.1063/1.106816. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1992) Mark A. Stettler and Mark S. Lundstrom. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

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Appl. Phys. Lett. 60 (23), 8 June 1992



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