The minority hole diffusivity, or equivalently the hole mobility, was measured in n+GaAs with the zero‐field time‐of‐flight technique. The minority hole mobility was measured for the donor doping range of 1.3×1017 cm−3 to 1.8×1018 cm−3 and was found to vary from 235 to 295 cm2/V s. At the lower doping level, the minority hole mobility is comparable to the corresponding majority hole mobility, but at 1.8×1018 cm−3 the minority hole mobility was 30% higher than the majority carrier hole mobility. These results have important implications for the design of devices such as solar cells and pnp‐heterojunction bipolar transistors.


Copyright (1992) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. Vol. 61, No. 22, 30 November 1992 and may be found at http://dx.doi.org/10.1063/1.108108. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1992) M. L. Lovejoy, M. R. Melloch, and M. S. LundstromR. K. Ahrenkiel. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

Date of this Version



doi: 10.1063/1.108108

Published in:

Appl. Phys. Lett. Vol. 61, No. 22, 30 November 1992



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