Minority electron properties in p+‐GaAs doped with beryllium (Be) and with carbon (C) are reported. Measurements of essentially identical responses for structures differing only in dopant element demonstrate that the diffusivity (Dn) and the diffusion lengths (Ln) are the same in p+‐GaAs doped to ∼1019 cm−3 with Be‐ and C‐dopants. Zero‐field time‐of‐flight analysis yields Dn=35 cm2/s and internal quantum efficiency analysis yields Ln=2.4 μm, which implies a lifetime that is approximately at the estimated radiative limit. In addition, the majority Hall mobility was also found to be identical for the Be‐ and C‐doped material.


Copyright (1992) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 61 (7), 17 August 1992 and may be found at http://dx.doi.org/10.1063/1.107756. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1992) M. L. Lovejoy, M. R. Melloch, M. S. Lundstrom B. M. Keyes, R. K. Ahrenkiel, T. J. de Lyon and J. M. Woodall. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

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Appl. Phys. Lett. 61 (7), 17 August 1992



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