Minority electron diffusivities in p+-GaAs-doped NA =~1.4×1018 and ~1019 cm-3 have been measured in zero-field conditions with an extension of the zero-field time-of-flight technique. Extension of the technique to make it applicable to heavily doped p+-GaAs is described and zero-field data are discussed. Unexpectedly, majority carrier drag effects are not evident in a comparison of this data with recently reported high-field data. Low zero-field mobility of electrons in p+-GaAs has important implications for high-speed devices such as heterojunction bipolar transistors.


Copyright (1991) The Japan Society of Applied Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Japanese Journal of Applied Physics: Vol. 30, No. 2A, February 1991 and may be found at http://iopscience.iop.org/article/10.1143/JJAP.30.L135/meta. The following article has been submitted to/accepted by Japanese Journal of Applied Physics. Copyright (1991) Michael L. Lovejoy, B. M. Keyes, Klausmeier-Brown, Michael R Melloch, R. K. Ahrenkiel, Mark S Lundstrom. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

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Japanese Journal of Applied Physics: Vol. 30, No. 2A, February 1991



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