Abstract
The n2ieDp product (where n2ie is the np product and Dp is the minority hole mobility) in heavily doped n‐GaAs has been measured by electrical characterization of p‐n‐p GaAs homojunction transistors with base dopings ranging from approximately 1×1017 to 9×1018 cm−3. The measured n2ieDp product decreases as the doping density increases. These results suggest that nie is roughly constant with doping density, in sharp contrast to the large increase observed for p‐type GaAs. This work shows that when designing GaAs bipolar devices, it is important to consider the large difference in effective band gap between n+ and p+ regions.
Date of this Version
1991
DOI
10.1063/1.106416
Published in:
M.P. Patkar, M.S. Lundstrom, and M.R. Melloch, “Transistor-Based Studies of Heavy Dop-ing Effects in n-GaAs,” Applied Phys. Lett., Vol. 59, pp. 1853-1854, 1991.
Comments
Copyright (1991) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 59 (15), 7 October 1991 and may be found at http://dx.doi.org/10.1063/1.106416. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1991) M. P. Patkar, M. S. Lundstrom, and M. R. Melloch. This article is distributed under a Creative Commons Attribution 3.0 Unported License.