A recently developed As2S3 chemical treatment was used to passivate the perimeters of self‐aligned heterojunction bipolar transistors (HBTs). The As2S3chemical treatment significantly lowered the base current resulting in a two order of magnitude reduction in the collector current density at which dc current gain was observed (β=1). No degradation with time has been observed in the electrical characteristics of the chemically treated HBTs. This absence of degradation is attributed to the impermeability to oxygen of the As2S3 glass which coats the perimeter of the HBT after chemical treatment.


Copyright (1990) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett., Vol. 57, pp. 2113-2115, 1990. and may be found at http://dx.doi.org/10.1063/1.104114. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1990) H. L. Chuang, M. S. Carpenter, M. R. Melloch, and M. S. Lundstrom E. Yablonovitch and T. J. Gmitter. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

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Appl. Phys. Lett., Vol. 57, pp. 2113-2115, 1990.



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