Measurements of electron injection currents in p+‐n diodes are presented for a range of p‐type dopant concentrations. A successive etch technique was used to characterize the electron injection current in terms of the product (noDn). Measurements are presented for Zn‐doped GaAs solar cells with p‐layer hole concentrations in the range 6.3×1017−1.3×1019 cm−3. The results demonstrate that so‐called band‐gap narrowing effects substantially increase the injected electron current in heavily doped p‐type GaAs. These heavy doping effects must be accounted for in the modeling and design of GaAs solar cells and heterostructure bipolar transistors.
Date of this Version
Appl. Phys. Lett. 52 (26), 27 June 1988