Measurements of electron injection currents in p+‐n diodes are presented for a range of p‐type dopant concentrations. A successive etch technique was used to characterize the electron injection current in terms of the product (noDn). Measurements are presented for Zn‐doped GaAs solar cells with p‐layer hole concentrations in the range 6.3×1017−1.3×1019 cm−3. The results demonstrate that so‐called band‐gap narrowing effects substantially increase the injected electron current in heavily doped p‐type GaAs. These heavy doping effects must be accounted for in the modeling and design of GaAs solar cells and heterostructure bipolar transistors.
Date of this Version
Appl. Phys. Lett. 52 (26), 27 June 1988
Copyright (1988) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 52 (26), 27 June 1988 and may be found at http://dx.doi.org/10.1063/1.99529. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1988) M. E. Klausmeier‐Brown, M. S. Lundstrom, and M. R. Melloch S. P. Tobin. This article is distributed under a Creative Commons Attribution 3.0 Unported License.