Abstract
n+pp+GaAs and n+pP+ GaAs/GaAs/Al0.3Ga0.7As mesa diodes have been fabricated from films grown by molecular‐beam epitaxy. The diodes made from films employing an AlGaAs buffer layer show marked improvements (a factor of 5 reduction) in recombination current densities. Deep level transient spectroscopy measurements moreover indicate that deep level concentrations are reduced by the AlGaAs buffer.
Date of this Version
1987
DOI
10.1063/1.339624
Published in:
J. Appl. Phys. 62 (4), 15 August 1987
Comments
Copyright (1987) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 62 (4), 15 August 1987 and may be found at http://dx.doi.org/10.1063/1.339624. The following article has been submitted to/accepted by The Journal of Applied Physics. Copyright (1987) D. P. Rancour, M. R. Melloch, R. F. Pierret, M. S. Lundstrom, M. E. Klausmeier‐Brown, and C. S. Kyono. This article is distributed under a Creative Commons Attribution 3.0 Unported License.