We report photocollection efficiency measurements of p + in GaAs! AIAs!GaAs diodes fabricated on films grown by molecular beam epitaxy, Both the zero-bias and bias-dependent photocollection characteristics can be explained by assuming that the band discontinuity between AlAs and GaAs is mostly accommodated i.n the valence band.
Date of this Version
Appl. Phys. Lett 50 (3). 19 January 1987