Abstract
We report photocollection efficiency measurements of p + in GaAs! AIAs!GaAs diodes fabricated on films grown by molecular beam epitaxy, Both the zero-bias and bias-dependent photocollection characteristics can be explained by assuming that the band discontinuity between AlAs and GaAs is mostly accommodated i.n the valence band.
Date of this Version
1987
DOI
10.1063/1.97648
Published in:
Appl. Phys. Lett 50 (3). 19 January 1987
Comments
Copyright (1987) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett 50 (3). 19 January 1987 and may be found at http://dx.doi.org/10.1063/1.97648. The following article has been submitted to/accepted by Applied Physics Journal. Copyright (1987) M. R. Melloch, C. P. McMahon, M. S. Lundstrom, J. A. Cooper Jr., Q‐D. Qian, and S. Bandyopadhyay. This article is distributed under a Creative Commons Attribution 3.0 Unported License.