Abstract
In this letter we propose and analyze a new semiconductor structure that can be fabricated by present day technology and can lead to large quantum interference effects with potential device applications.
Date of this Version
1986
DOI
10.1063/1.96484
Published in:
Appl. Phys. Lett. 48 (7),17 February 1986
Comments
Copyright (1986) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 48 (7),17 February 1986 and may be found at http://dx.doi.org/10.1063/1.96484. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1986) S. Datta, M. R. Melloch, S. Bandyopadhyay, and M. S. Lundstrom. This article is distributed under a Creative Commons Attribution 3.0 Unported License.