30GHz self-assembled highly-efficient on-chip monopole antennas
Abstract
A novel monopole antenna made from an out-of-plane stressed cantilever beam is presented. The radiating element is isolated from a low-resistivity silicon substrate with a ground plane and thus high radiation efficiency of more than 50 can be achieved even with a CMOS-grade silicon substrate. The proposed antennas can be readily fabricated by a conventional IC fabrication process, which enables a high level of integration and low cost. Our experimental results of the monopole operating at 30GHz agree well with our theoretical predictions. 2008 The Institution of Engineering and Technology.
Keywords
Antennas, silicon
Date of this Version
January 2008
DOI
http://dx.doi.org/10.1049/el:20082606
Published in:
Electronics Letters 44,25 (2008) 1437-1439;
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