Scaling of technology leads to both a countable number and random position of dopants in the channel region (Fig. 1), known as random dopants fluctuations (RDF), which affects vital device and circuit performance parameters (delay, transconductunce, etc). RDF causes large variations of performance between similar transistors on the same die. The variations of the threshold voltage have been ruminated and examined not only experimentally but also numerically, through the use of 3D atomistic level simulators [1]-[2]. However, existing simulation methods and analytical models for RDF fail to meet the requirements for small computational time and accuracy simultaneously. In this paper we propose a fast and accurate analytical model and a corresponding simulator which captures the 3-D effects.


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Models, Three dimensional, Threshold voltage

Date of this Version

January 2009



Published in:

Device Research Conference - Conference Digest, DRC (2009) 81-82;



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