3C-SiC on Si substrates using Pendeo-epitaxial growth

Authors

B. C. Kirn
M. A. Capano

Abstract

Cubic silicon carbide (3C-SiC) growth using Pendeo-epitaxy technique was successfully achieved on Si(OOl) substrates. 3C-SiC was grown by chemical vapor deposition (CVD) with silane and propane as precursors. Effects of underlying stripes and seed 3C-SiC layers thickness on PE 3C-SiC films were investigated. Root mean square (RMS) measurements using atomic force microscope (AFM) showed that surface morphology of PE 3C-SiC films remarkably improves with an increase of the seed 3C-SiC layer thickness, and the values were from 9.8 nm for 3 m thick seed layer to 0.5 nm for 10 m thick seed layer thickness. Additionally, domain boundary densities were counted, and the values also strongly depend on the seed layer thickness: from 1500/mm2 for 3 m seed layer thickness to 100/mm for 10 m seed layer thickness. Pendeo-epiaxial growth profiles with various width/separation dimensions of stripes were also investigated, and stripes with width of 10 m and separation of 5 m provide the best profile and process viability.

Comments

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Keywords

Atomic force microscopy, chemical vapour deposition, epitaxial growth, semiconductor epitaxial layers, semiconductor growth, Silicon compounds, surface morphology, wide band gap semiconductors

Date of this Version

January 2009

DOI

http://dx.doi.org/10.4028/www.scientific.net/MSF.600-603.219

Published in:

Materials Science Forum (2009) 219-22;