3C-SiC on Si substrates using Pendeo-epitaxial growth
Cubic silicon carbide (3C-SiC) growth using Pendeo-epitaxy technique was successfully achieved on Si(OOl) substrates. 3C-SiC was grown by chemical vapor deposition (CVD) with silane and propane as precursors. Effects of underlying stripes and seed 3C-SiC layers thickness on PE 3C-SiC films were investigated. Root mean square (RMS) measurements using atomic force microscope (AFM) showed that surface morphology of PE 3C-SiC films remarkably improves with an increase of the seed 3C-SiC layer thickness, and the values were from 9.8 nm for 3 m thick seed layer to 0.5 nm for 10 m thick seed layer thickness. Additionally, domain boundary densities were counted, and the values also strongly depend on the seed layer thickness: from 1500/mm2 for 3 m seed layer thickness to 100/mm for 10 m seed layer thickness. Pendeo-epiaxial growth profiles with various width/separation dimensions of stripes were also investigated, and stripes with width of 10 m and separation of 5 m provide the best profile and process viability.
Atomic force microscopy, chemical vapour deposition, epitaxial growth, semiconductor epitaxial layers, semiconductor growth, Silicon compounds, surface morphology, wide band gap semiconductors
Date of this Version
Materials Science Forum (2009) 219-22;
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