Generation and recovery of degradation during and after negative bias temperature instability (NBTI) stress are studied in a wide variety of plasma-nitrided (PN) silicon oxynitride (SiON) p-MOSFETs. An ultrafast on-the-fly linear drain current (IDLIN) technique, which is capable of measuring the shift in threshold voltage from very short (approximately in microseconds) to long (approximately in hours) stress/ recovery time, is used. The mechanics of NBTI generation and recovery are shown to be strongly correlated and can be consistently explained using the framework of an uncorrelated sum of a fast and weakly temperature (T)-dependent trapped-hole (Vh) component and a relatively slow and strongly T-activated interface trap (VIT) component. The SiON process dependences are attributed to the difference in the relative contributions of Vh and VIT to the overall degradation (VT), as dictated by the nitrogen (N) content and thickness of the gate insulator.
Degradation, Drain current, hole traps, MOSFET devices, Negative temperature coefficient, Plasma applications, Plasma diagnostics, Plasma stability, Plasmas, Recovery, Semiconducting silicon compounds, Silicon nitride, Thermodynamic stability
Date of this Version
IEEE Electron Device Letters 30,9 (2009) 978-980;