Abstract
We investigate the role of electron-phonon scattering and gate bias in degrading the drive current of nanotube field-effect transistors FETs. Optical phonon scattering significantly decreases the drive current only when gate voltage is higher than a well-defined threshold. For comparable electron-phonon coupling, a lower phonon energy leads to a larger degradation of drive current. Thus in semiconductor nanowire FETs, the drive current will be more sensitive than in carbon nanotube FETs because of the smaller phonon energies in semiconductors. Acoustic phonons and other elastic scattering mechanisms are most detrimental to nanotube FETs irrespective of biasing conditions.
Date of this Version
2006
DOI
10.1063/1.2218322
Published in:
Applied Physics Letters 89, 023125 (2006)
Comments
Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 89, 023125 (2006) and may be found at http://dx.doi.org/10.1063/1.2218322. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2006) Siyuranga O. Koswatta, Sayed Hasan, Mark S. Lundstrom, M. P. Anantram and Dmitri E. Nikonov. This article is distributed under a Creative Commons Attribution 3.0 Unported License.