A systematic capacitance-voltage C-V study has been performed on GaAs metaloxide- semiconductor MOS structures with atomic-layer-deposited Al2O3 as gate dielectrics and indium tin oxide ITO as the metal gate. The transparent conducting ITO gate allows homogeneous photoillumination on the whole MOS capacitance area, such that one can easily observe the low-frequency LF C-V and quasistatic C-V of GaAs at room temperature. The semiconductor capacitance effect on GaAs MOS devices has also been identified and insightfully discussed based on the obtained LF C-V curves. The semiconductor capacitance effect becomes more important for devices with high-mobility channel materials and aggressively scaled high-k gate dielectrics.


Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 92, 252105 (2008) and may be found at http://dx.doi.org/10.1063/1.2953080. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2008) Applied Physics Letters. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

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Appl. Phys. Lett. 92, 252105 (2008)



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