Abstract
Power dissipation has become a major obstacle in performance scaling of modern integrated circuits and has spurred the search for devices operating at lower voltage swing. In this letter, we study p-i-n band-to-band tunneling field effect transistors taking semiconducting carbon nanotubes as the channel material. The on current of these devices is mainly limited by the tunneling barrier properties, and phonon-scattering has only a moderate effect.We show, however, that the off current is limited by phonon absorption assisted tunneling, and thus is strongly temperature dependent. Subthreshold swings below the 60 mV/decade conventional limit can be readily achieved even at room temperature. Interestingly, although subthreshold swing degrades due to the effects of phonon scattering, it remains low under practical biasing conditions.
Date of this Version
2008
DOI
10.1063/1.2839375
Published in:
Appl. Phys. Lett. 92, 043125 (2008)
Comments
Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 92, 043125 (2008) and may be found at http://dx.doi.org/10.1063/1.2839375. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2008) Siyuranga O. Koswatta, Mark S. Lundstrom and Dmitri E. Nikonov. This article is distributed under a Creative Commons Attribution 3.0 Unported License.