We apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the nonequilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of scattering using a simple approximation inspired by Büttiker. It is based on an expansion of the device Hamiltonian in coupled mode space. Simulation results are used to highlight quantum effects and discuss the importance of scattering when examining the transport properties of nanoscale transistors with differing channel access geometries. Additionally, an efficient domain decomposition scheme for evaluating the performance of nanoscale transistors is also presented. This article highlights the importance of scattering in understanding the performance of transistors with different channel access geometries.


Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics Volume 95, Issue 1, 10.1063/1.1631754. and may be found at http://dx.doi.org/10.1063/1.1631754. The following article has been submitted to/accepted by [Name of Journal]. Copyright (year) Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License

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Journal of Applied Physics. Volume 95, Issue 1. doi: 10.1063/1.1631754



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