The performance limits of carbon nanotube field-effect transistors (CNTFETs) are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide–semiconductor field-effect transistors (MOSFETs). Compared to ballistic MOSFETs, ballistic CNTFETs show similar I–VI–V characteristics but the channel conductance is quantized. For low-voltage, digital applications, the CNTFET with a planar gate geometry provides an on-current that is comparable to that expected for a ballistic MOSFET. Significantly better performance, however, could be achieved with high gate capacitance structures. Because the computed performance limits greatly exceed the performance of recently reported CNTFETs, there is considerable opportunity for progress in device performance.


Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters. Volume 80, Issue 17. 10.1063/1.1474604 and may be found at http://dx.doi.org/10.1063/1.1474604. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2002) Jing Guo, Mark Lundstrom, and Supriyo Datta. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

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Applied Physics Letters > Volume 80, Issue 17 > 10.1063/1.1474604



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