Abstract
Electron transport in model Si nanotransistors is examined by numerical simulation using a hierarchy of simulation methods, from full Boltzmann, to hydrodynamic, energy transport, and drift-diffusion. The on-current of a MOSFET is shown to be limited by transport across a low-field region about one mean-free-path long and located at the beginning of the channel. Commonly used transport models based on simplified solutions of the Boltzmann equation are shown to fail under such conditions. The cause for this failure is related to the neglect of the carriers' drift energy and to the collision-dominated assumptions typically used in the development of simplified transport models.
Date of this Version
2001
Published in:
VLSI Design Volume 13 (2001), Issue 1-4, Pages 5-13 http://dx.doi.org/10.1155/2001/16023
Comments
The following article appeared in VLSI Design Volume 13 (2001), Issue 1-4, Pages 5-13 and may be found at http://dx.doi.org/10.1155/2001/16023. The following article has been submitted to/accepted by VLSI Design. Copyright (2001) Kausar Banoo, Jung-Hoon Rhew, Mark Lundstrom, Chi-Wang Shu, and Joseph W. Jerome. This article is distributed under a Creative Commons Attributions License.