Reflection Anistropy Spectroscopy Study of the Near Surface Electric Field in Low-Temperature Grown GaAs (001)

Authors

Todd Holden, Brooklyn College of the City University of New York
Fred H. Pollak, Brooklyn College of the City University of New York
J. L. Freeouf, Interface Studies, Inc., Katonah, New York
D. McInturff, Purdue University
J. L. Gray, Purdue University
Mark S. Lundstrom, Purdue UniversityFollow
J. M. Woodall, Purdue University

Abstract

We have evaluated an ‘‘effective depletion width’’ of =< 45 Å and the sign (n-type/upward band bending) of the near surface electric field in low-temperature grown GaAs ~001! using the optical method of reflection anisotropy spectroscopy in the vicinity of the spin-orbit split E₁ , E₁ + Delta₁ optical features. Our results provide evidence that surface Fermi level pinning occurs for air exposed (001) surfaces of undoped low temperature grown GaAs.

Comments

Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 70, Issue 9 doi: 10.1063/1.118499 and may be found at http://dx.doi.org/10.1063/1.118499. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1996) Todd Holden and Fred H. Pollak J. L. Freeouf D. McInturff, J. L. Gray, M. Lundstrom, and J. M. Woodall. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

Date of this Version

1997

Published in:

Applied Physics Letters: Volume 70, Issue 9 doi: 10.1063/1.118499