The electrical properties of lattice mismatched InAs/GaP heterojunctions are examined. In spite of a high dislocation density at the heterointerface, the current versus voltage characteristics show nearly ideal behavior with low reverse leakage currents and high breakdown voltages. The forward currentvaried exponentially with bias displaying ideal factors of 1.10 or less. Band offsets estimated from current–voltage and capacitance–voltage analysis are consistent with previous estimates based on differences in Schottky barrier heights.


Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters: Volume 70, Issue 12 doi: 10.1063/1.118614 and may be found at http://dx.doi.org/10.1063/1.118614 The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1998) E. H. Chen, T. P. Chin, J. M. Woodall, and M. S. Lundstrom. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

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Applied Physics Letters: Volume 70, Issue 12 doi: 10.1063/1.118614



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