Abstract
GaAs nanowires (NWs) offer the possibility of decoupling light absorption from charge transport for high-performance photovoltaic (PV) devices. However, it is still an open question as to whether these devices can exceed the Shockley-Queisser efficiency limit for single-junction PV. In this work, single standing GaAs-based nanowire solar cells in both radial and vertical junction configurations is analyzed and compared to a planar thin-film design. By using a self-consistent, electrical-optically coupled 3D simulator, we show the design principles for nanowire and planar solar cells are significantly different; nanowire solar cells are vulnerable to surface and contact recombination, while planar solar cells suffer significant losses due to imperfect backside mirror reflection. Overall, the ultimate efficiency of the GaAs nanowire solar cell with radial and vertical junction is not expected to exceed that of the thin-film design, with both staying below the Shockley-Queisser limit.
Date of this Version
2014
Published in:
Optics Express Vol. 22, Issue S2, pp. A344-A358 (2014) https://doi.org/10.1364/OE.22.00A344
Comments
Xufeng Wang, Mohammad Ryyan Khan, Mark Lundstrom, and Peter Bermel, "Performance-limiting factors for GaAs-based single nanowire photovoltaics" Optics Express, Vol. 22, No. S2, pp. A344-A358
Copyright 2013 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic electronic or print reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
https://doi.org/10.1364/OE.22.00A344