Abstract
The device physics of nanoscale MOSFETs is reviewed and related to traditional compact models. Beginning with the Virtual Source model, a model for nanoscale MOSFETs expressed in traditional form, we show how a Landauer approach gives a clear, physical interpretation to the parameters in the model. The analysis shows that transport in the channel is limited by diffusion near the virtual source both below and above threshold, that current saturation is determined by velocity saturation near the source, not by the maximum velocity in the channel, and that the channel resistance approaches a finite value as the channel length approaches zero. These results help explain why traditional models continue to work well at the nanoscale, even though carrier transport is distinctly different from that at the microscale, and they identify the essential physics that physics-based compact models for nanoscale MOSFETs should comprehend.
Date of this Version
2013
Published in:
Compact Models and the Physics of Nanoscale FETs Mark S. Lundstrom; Dimitri A. Antoniadis IEEE Transactions on Electron Devices Year: 2014, Volume: 61, Issue: 2 Pages: 225 - 233, DOI: 10.1109/TED.2013.2283253
Comments
(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Compact Models and the Physics of Nanoscale FETs Mark S. Lundstrom; Dimitri A. Antoniadis IEEE Transactions on Electron Devices Year: 2014, Volume: 61, Issue: 2 Pages: 225 - 233, DOI: 10.1109/TED.2013.2283253