An emission-diffusion theory that describes MOSFETS from the ballistic to diffusive limits is developed. The approach extends the Crowell-Sze treatment of metalsemiconductor junctions to MOSFETs and is equivalent to the scattering/transmission model of the MOSFET. The paper demonstrates that the results of the transmission model can be obtained from a traditional, drift-diffusion analysis when the boundary conditions are properly specified, which suggests that traditional drift-diffusion MOSFET models can also be extended to comprehend ballistic limits.
Date of this Version
IEEE Transactions on Electron Devices, Vol. 62, pp. 4174-4178, 2015.