Measured minority and majority carrier mobility temperature dependencies in heavily doped n- and p-GaAs are compared. Majority carrier mobilities in heavily doped GaAs are essentially temperature ~T! independent while minority carrier mobilities exhibit a roughly 1/T dependence. Majority carrier freezeout, which reduces both majority–minority carrier and ionized impurity scattering, is shown not to be responsible for the 1/T minority carrier mobility dependence. The difference in minority and majority carrier mobility T dependencies is explained in terms of the increased degree of degeneracy of majority carriers with decreased temperature, which decreases majority–minority carrier scattering.


Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 67 (8), 21 August 1995 and may be found at http://dx.doi.org/10.1063/1.114974. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1995) Michael L. Lovejoy, Michael R. Melloch and Mark S. Lundstrom. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

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Appl. Phys. Lett. 67 (8), 21 August 1995



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