Minority electron mobilities in pf-In0.ssGac4, As have been measured with the zero field time-of-flight technique. The room-temperature (297 K) minority electron mobilities for p+-In,, 53Gac47A~ doped 0.9 and 3.1 x 10” cmm3 are found to be 2900 and 3300 cm* V-’ s-l, respectively. These are the first measurements to demonstrate enhancement in minority-carrier mobility as doping is increased for heavily doped Ines3Gae.4+s. This enhancement in mobility as doping is increased is similar to that observed in p+-GaAs, which has been attributed to reductions in plasmon and carrier-carrier scattering between minority electrons and majority holes.
Date of this Version
Appl. Phys. Lett. 63 (5), 2 August 1993