Minority electron mobilities in pf-In0.ssGac4, As have been measured with the zero field time-of-flight technique. The room-temperature (297 K) minority electron mobilities for p+-In,, 53Gac47A~ doped 0.9 and 3.1 x 10” cmm3 are found to be 2900 and 3300 cm* V-’ s-l, respectively. These are the first measurements to demonstrate enhancement in minority-carrier mobility as doping is increased for heavily doped Ines3Gae.4+s. This enhancement in mobility as doping is increased is similar to that observed in p+-GaAs, which has been attributed to reductions in plasmon and carrier-carrier scattering between minority electrons and majority holes.


Copyright (1993) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 63 (5), 2 August 1993 and may be found at http://dx.doi.org/10.1063/1.109974. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1993) E. S. Harmon, M. L. Lovejoy, M. R. Melloch, and M. S. Lundstrom D. Ritter, and R. A. Hamm. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

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Appl. Phys. Lett. 63 (5), 2 August 1993



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