We reported the experimental demonstration of deep-submicrometer inversion-mode In0.75Ga0.25As MOSFETs with ALD high-k AI2O3 as gate dielectric. In this letter, n-channel MOSFETs with 100-200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200-130-nm-long gates exhibit drain currents of 232-440 A/m and transconductances of 538-705 S/m. The 100-nm device has a drain current of 801 A/m and a transconductance of 940 Sm. However, the device cannot be pinched off due to severe short-channel effect. Important scaling metrics, such as on/off current ratio, subthreshold swing, and drain-induced barrier lowering, are presented, and their relations to the short-channel effect are discussed.


Publisher retains content copyright.


Atoms, Drain current, Electric potential, Gallium, Gate dielectrics, Gates (transistor), MOSFET devices, Semiconducting indium, Transconductance

Date of this Version

January 2009



Published in:

IEEE Electron Device Letters 30,7 (2009) 700-702;



To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.