#### Research Title

#### Keywords

CMOS SOI, microwave frequency circuits, Virtual Source, high frequency model

#### Presentation Type

Talk

#### Research Abstract

Complementary Metal Oxide Semiconductor (CMOS) technology at the nanometre scale is an excellent platform to implement monolithically integratedsystems because of the low cost of manufacturing and ease of integration. Newly developed CMOS Silicon on Insulator (SOI) transistors that are currentlydeveloped are suitable for use in radio frequency circuits. They find applications in many areas such as 5G telecommunication systems, high speed Wi-Fi andairport body-scanners. Unfortunately, the models for CMOS SOI transistors that are currently used in these circuits are inaccurate because of their complexity.The models currently used require the optimization of more than 200 variables. This paper aims to accurately create a scalable model of a P-type MOS transistorusing a Virtual Source (VS) model with much less complexity. The VS model’s DC characteristics will require the optimization of only ten parameters and issupplemented with parasitic resistances, inductances and capacitances to accurately predict behaviour at radio frequencies. These parameters were optimizedtwo at a time using a multivariate optimization algorithm while fixing the remaining parameter’s values within a certain range. A simulation of the voltage andcurrent at the drain of the transistor was performed and the resulting I-V curves were plotted. A frequency simulation was also conducted in order to test thehigh frequency performance of the MOSFET. A typical I-V characteristic curve for a PMOS was obtained with no change in shape when the transistor widthwas scaled. The model’s performance under high frequencies also matched those displayed by a standard 45nm PMOS. The I-V characteristic plots that wereobtained displayed the general behaviour of a p-type MOSFET under those voltage conditions. This demonstrates that the Virtual source model is able topredict the general behaviour of the I-V characteristic curves of the p-type MOSFET as well as function properly at high frequencies typically seen in RFcircuits.

#### Session Track

Nanotechnology

#### Recommended Citation

Vaibhav R. Ramachandran, Saeed Mohammadi, and Sutton Hathorn,
"Virtual-Source based accurate model for predicting noise behavior at high frequencies in nanoscale PMOS SOI transistors"
(August 3, 2017).
*The Summer Undergraduate Research Fellowship (SURF) Symposium.*
Paper 161.

http://docs.lib.purdue.edu/surf/2017/presentations/161

*Technical Paper*

#### Included in

Nanotechnology Fabrication Commons, VLSI and Circuits, Embedded and Hardware Systems Commons

Virtual-Source based accurate model for predicting noise behavior at high frequencies in nanoscale PMOS SOI transistors

Complementary Metal Oxide Semiconductor (CMOS) technology at the nanometre scale is an excellent platform to implement monolithically integratedsystems because of the low cost of manufacturing and ease of integration. Newly developed CMOS Silicon on Insulator (SOI) transistors that are currentlydeveloped are suitable for use in radio frequency circuits. They find applications in many areas such as 5G telecommunication systems, high speed Wi-Fi andairport body-scanners. Unfortunately, the models for CMOS SOI transistors that are currently used in these circuits are inaccurate because of their complexity.The models currently used require the optimization of more than 200 variables. This paper aims to accurately create a scalable model of a P-type MOS transistorusing a Virtual Source (VS) model with much less complexity. The VS model’s DC characteristics will require the optimization of only ten parameters and issupplemented with parasitic resistances, inductances and capacitances to accurately predict behaviour at radio frequencies. These parameters were optimizedtwo at a time using a multivariate optimization algorithm while fixing the remaining parameter’s values within a certain range. A simulation of the voltage andcurrent at the drain of the transistor was performed and the resulting I-V curves were plotted. A frequency simulation was also conducted in order to test thehigh frequency performance of the MOSFET. A typical I-V characteristic curve for a PMOS was obtained with no change in shape when the transistor widthwas scaled. The model’s performance under high frequencies also matched those displayed by a standard 45nm PMOS. The I-V characteristic plots that wereobtained displayed the general behaviour of a p-type MOSFET under those voltage conditions. This demonstrates that the Virtual source model is able topredict the general behaviour of the I-V characteristic curves of the p-type MOSFET as well as function properly at high frequencies typically seen in RFcircuits.