Keywords
Crystal Growth, n-type Doping, Black Phosphorus, Nano-Fabrication
Presentation Type
Talk
Research Abstract
Black phosphorus (BP) is a 2D semiconducting material with high carrier mobility. It is usually p-type due to oxidation states near its valence band. Although achieved through other growth methods, n-type doping has not yet been accomplished through the modern chemical vapor transport (CVT) growth method. To address this issue, small amounts of tellurium were added to Red Phosphorus to act as a dopant during the CVT growth process in addition to tin(Sn) and tin(IV) iodide, which facilitate growth. The chemicals are heated up to 600°C and precisely cooled in a 21-hour process, during which BP crystals should form. After successful growth, the synthesized BP is used as a channel material in transistors. N-type transistor characterization will be investigated, which will indicate whether the BP has been doped successfully using the safer and faster CVT growth process.
Session Track
Nanotechnology
Recommended Citation
Yuqin Duan, Adam Charnas, Jingkai Qin, and Peide Ye,
"Improving Methods of Doping on Black Phosphorus"
(August 3, 2017).
The Summer Undergraduate Research Fellowship (SURF) Symposium.
Paper 110.
https://docs.lib.purdue.edu/surf/2017/presentations/110
Improving Methods of Doping on Black Phosphorus
Black phosphorus (BP) is a 2D semiconducting material with high carrier mobility. It is usually p-type due to oxidation states near its valence band. Although achieved through other growth methods, n-type doping has not yet been accomplished through the modern chemical vapor transport (CVT) growth method. To address this issue, small amounts of tellurium were added to Red Phosphorus to act as a dopant during the CVT growth process in addition to tin(Sn) and tin(IV) iodide, which facilitate growth. The chemicals are heated up to 600°C and precisely cooled in a 21-hour process, during which BP crystals should form. After successful growth, the synthesized BP is used as a channel material in transistors. N-type transistor characterization will be investigated, which will indicate whether the BP has been doped successfully using the safer and faster CVT growth process.