Strain Relaxation In Si/Ge/Si Nanoscale Bars From Molecular Dynamics Simulations
Abstract
We use molecular dynamics (MD) with the reactive interatomic potential ReaxFF to characterize the local strains of epitaxial Si/Ge/Si nanoscale bars as a function of their width and height. While the longitudinal strain (along the bars length) is independent of geometry, surface relaxation leads to transverse strain relaxation in the Ge section. This strain relaxation increases with increasing height of the Ge section and reduction in its width and is complete (i.e., zero transverse strain) for roughly square cross sections of Ge leading to a uniaxial strain state. Such strain state is desirable in some microelectronics applications. From the MD results, which are in excellent agreement with experiments, we derive a simple model to predict lateral strain as a function of geometry for this class of nanobars.
Keywords
field-effect transistors, reactive force-field, p-type, silicon, heterostructures, potentials, insulator, shear, elemental semiconductors, germanium, molecular dynamics method, nanostructured materials, potential energy functions, semiconductor heterojunctions, silicon, stress relaxation
Date of this Version
8-1-2009