Published in:
Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment 568,1 (2006) 51-55;
Link to original published article:
http://dx.doi.org/doi:10.1016/j.nima.2006.05.199
Abstract
In this paper, we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages. (c) 2006 Elsevier B.V. All rights reserved.
Keywords
electric field;; radiation hardness;; charge collection;; silicon;; pixel;; cms;; electric-field;; detectors
Date of this Version
January 2006