Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors

Qingmin Liu, University of Notre Dame
Lin Dong, Purdue University, Birck Nanotechnology Center
Yiqun Liu, Harvard University
Roy Gordon, Harvard University
Peide D. Ye, Purdue University, Birck Nanotechnology Center
Patrick Fay, University of Notre Dame
Alan Seabaugh, University of Notre Dame

Abstract

The frequency response of all oxide field-effect transistors with amorphous LaAlO3 on a crystalline SrTiO3 substrate is reported. The intrinsic cut-off frequencies of 4 mu m gate-length devices are found to be approximately 17 MHz indicating that with gate length scaling gigahertz cut-off frequency is possible. The low cut-off frequency is primarily limited by the low effective mobility. The estimated effective mobility value determined from the S-parameter measurement is 3.8 cm(2)/Vs, which is consistent with previous reports. Small-signal equivalent circuit model parameters are extracted by fitting to on-wafer measured S-parameters. Good agreement is obtained between measured and simulated S-parameters based on the equivalent circuit model. (C) 2012 Elsevier Ltd. All rights reserved.

Discipline(s)

Nanoscience and Nanotechnology