Laser direct write of silicon nanowires
Date of this Version
10-2011Citation
Optical Engineering 50(10), 104301 (September 29, 2011)
Abstract
Using laser direct writing in combination with chemical vapor deposition to produce nanometer scale electronics holds several advantages over current large scale photolithography methods. These include single step electrical interconnect deposition, mask-less patterning, and parallel processing. When taken together they make quick production of individualized electronic circuits possible. This work demonstrates the ability of combining laser direct write and chemical vapor deposition to produce silicon wires a few hundred nanometers wide. Optimized parameters will be discussed, with a particular emphasis paid to the laser-material interactions. The feasibility for electronic applications will be shown by examining the deposition formation on a silicon dioxide surface without degrading the surface's integrity, and by evaluating the resistivity of the deposited silicon wires. (C) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.3630225]
Discipline(s)
Nanoscience and Nanotechnology
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Comments
James I. Mitchell, Se Jun Park, C. Adam Watson, Pornsak Srisungsitthisunti, Chookiat Tansarawiput, Minghao Qi, Eric A. Stach, Chen Yang, Xianfan Xu "Laser direct write of silicon nanowires," Optical Engineering, Volume 50 Issue 10, No. 104301 . September 29, 2011
Copyright 2011 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic electronic or print reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
http://dx.doi.org/10.1117/1.3630225