Sources and implications of resonant mode splitting in silicon nanowire devices

Molly Nelis, Purdue University
LIn Yu, Purdue University
Weixia Zhang, Purdue University
Yanjie Zhao, Purdue University
Chen Yang, Purdue University
Arvind Raman, Purdue University
Saeed Mohammadi, Purdue University
Jeffrey Rhoads, Purdue University

Date of this Version

11-11-2011

Citation

ISSN: 0957-4484

Abstract

This work investigates the effects of asymmetric cross-sectional geometry on the resonant response of silicon nanowires. The work demonstrates that dimensional variances of less than 2% qualitatively alter a nanosystem's near-resonant response, yielding a non-Lorentzian frequency response structure, which is a direct consequence of resonant mode splitting. Experimental results show that this effect is independent of device boundary conditions, and can be easily modeled using continuous beam theory. Proper understanding of this phenomenon is believed to be essential in the characterization of the dynamic response of resonant nanowire systems, and thus the predictive design of such devices.

 

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